KTA1664 Datasheet, PDF (1/3 Pages) KEC(Korea Electronics) – EPITAXIAL PLANAR PNP TRANSISTOR (HIGH CURRENT)

NPN Epitaxial Planar Transistors
P b Lead(Pb)-Free
ABSOLUTE MAXIMUM RATINGS (T_A=25˚C)
Rating
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
Symbol
V_CBO
V_CEO
V_EBO
I_C
P_D
T_j
T_stg
KTA1664
1. BASE
2. COLLECTOR
3. EMITTER
1
2
3
SOT-89
Limits
Unit
40
V
32
V
5.0
V
1.0
A
0.5
W
-55 to +150
˚C
-55 to +150
˚C
ELECTRICAL CHARACTERISTICS(T_A=25˚C unless otherwise noted)
Parameter
Symbol
Min
Typ Max Unit
Collector-Base Breakdown Voltage
I_C=50µA, I_E=0
Collector-Emitter Breakdown Voltage
I_C=1mA, I_B=0
Emitter-Base Breakdown Voltage
I_E=50µA, I _C =0
Collector Cuto Current
V_CB=20V, I_E=0
Collector Cuto Current
V_EB=4V, I_C=0
BV_CBO
40
BV_CEO
32
BV_EBO
5
I_CBO
-
I_EBO
-
-
-
V
-
-
V
-
-
V
-
0.5
µA
-
0.5
µA
WEITRON
1/3
http://www.weitron.com.tw
11-Dec-08