KTA1298 Datasheet, PDF (1/4 Pages) KEC(Korea Electronics) – EPITAXIAL PLANAR PNP TRANSISTOR (LOW FREQUENCY POWER AMPLIFIER, POWER SWITCHING)

PNP Silicon Transistors
MAXIMUM RATINGS (Ta=25 C)
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current -Continuous
Symbol
VCEO
VCBO
VEBO
IC
THERMAL CHARACTERISTICS
Characteristics
Total Device Dissipation FR-5 Board ⁽¹⁾
TA =25 C
Derate above 25 C
Thermal Resistance, Junction Ambient
Junction and Storage, Temperature
Device Marking
KTA1298=IO, IY
Symbol
PD
R _θJA
T_J, Tstg
ELECTRICAL CHARACTERISTICS
Characteristics
Collector-Emitter Breakdown Voltage (IC= -10 mAdc, IB=0)
Collector-Base Breakdown Voltage (IC= -1 uAdc, IE=0)
Emitter-Base Breakdown Voltage (IE= -1 uAdc, IC=0)
Collector Cutoff Current (VCB= -30Vdc, IE=0)
Emitter Cutoff Current (VEB= -5.0 Vdc, IC=0)
1. FR-5=1.0 ^I I0.75 ^I I 0.062 in
KTA1298
COLLECTOR
BASE
EMITTER
3
1
2
SOT-23
Value
-30
-35
-5.0
-800
Value
200
1.6
625
-55 to +150
Unit
Vdc
Vdc
Vdc
mAdc
Unit
mW
mW/ C
C/W
C
Symbol
Min
Max
Unit
V(BR)CEO
-30
-
Vdc
V(BR)CBO
-35
-
Vdc
V(BR)EBO _-5.0
-
Vdc
ICBO
IEBO
-
-1.0
uAdc
-
-1.0
uAdc
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