KTA1266 Datasheet, PDF (1/3 Pages) KEC(Korea Electronics) – EPITAXIAL PLANAR PNP TRANSISTOR (GENERAL PURPOSE, SWITCHING)

WEITRON
PNP Plastic-Encapsulate Transistor
P b Lead(Pb)-Free
FEATURES :
• Excellent hFE Linearity
•� Low noise
KTA1266
1. EMITTER
2. COLLECTOR
3. BASE
TO-92
MAXIMUM RATINGS (T_A=25℃ unless otherwise noted)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Symbol
V_CBO
V_CEO
V_EBO
I_C
P_C
T_J
Storage Temperature
T_stg
Value
-50
-50
-5
-0.15
625
150
-55-150
Units
V
V
V
A
mW
℃
℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Symbol
Test conditions
MIN
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
V_(BR)CBO
V_(BR)CEO
V_(BR)EBO
I_CBO
I_EBO
h_FE(1)
h_FE(2)
V_CE(sat)
V_BE(sat)
f_T
C_ob
I_C= -100μA, I_E=0
-50
I_C= -1m A,I_B=0
-50
I_E= -100μA, I_C=0
-5
V_CB= -50V, IE=0
V_EB= -5V, I_C=0
V_CE= -6V,I_C= -2mA
70
V_CE= -6V,I_C= -150mA
25
I_C= -100mA,I_B= -10 mA
I_C= -100mA,I_B= -10 mA
V_CE= -10V, I_C= -1mA
80
VCB= -10V,IE=0, f=1MHz
Noise figure
NF
VCE= -6V, Ic= -0.1mA,
f=1KHZ, Rg=10KΩ
TYP
MAX
-0.1
-0.1
400
UNIT
V
V
V
μA
μA
-0.3
V
-1.1
V
MHz
7
pF
10
dB
CLASSIFICATION OF h_FE(1)
Rank
O
Range
70 - 140
Marking
V
120 - 240
GR
200 - 400
WEITRON
1/3
hpp://www.weitron.com.tw
04-Oct-2010