DTD123Y Datasheet, PDF (1/3 Pages) Unisonic Technologies – DIGITAL TRANSISTORS (BUILT-IN RESISTORS)

Bias Resistor Transistor NPN Silicon
P b Lead(Pb)-Free
R1
1
BASE R 2
COLLECTOR
3
2
EMITTER
DTD123Y
3
1
2
SOT-23
Absolute maximum ratings (TA = 25ºC)
Parameter
Symbol
Limits
Unit
Supply voltage
Vcc
50
V
Input voltage
VIN
-5~+12
V
Output current
IC
500
mA
Power dissipation
Pd
200
mW
Junction temperature
Tj
150
Storage temperature
Tstg
-55~+150
Electrical characteristics (TA = 25ºC)
Parameter
Symbol Min Typ Max Unit
Conditions
Input voltage
Output voltage
Input current
VI(off) -
VI(on) 2
Vo(on) ^-
II
-
- 0.3
-
-
V
0.1 0.3 V
- _{3.6 mA}
Vcc = 5V,Io = 100µA
Vo = 0.3V,Io = 20 mA
Io/II = 50 mA/2.5 mA
VI= 5V
Output current
DC current gain
Input resistance
Io(off) -
- 0.5 µA
h FE 56 -
-
R1 1.54 2.2 2.86 kΩ
Vcc = 50V,V I= 0V
Vo = 5V,Io=50 mA
-
Resistance ratio
Transition frequency
R2/R1
fT
3.6 4.5 5.5
-
- 200 ^- MHZ VCE = 10V,I E = -500m A,f = 100MHZ*
* ^{Transition frequency of the device}
DEVICE MARKING : F62
WEITRON
http://www.weitron.com.tw
1/3
25-Apr-08