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| C1815LT1 Datasheet, PDF (1/3 Pages) Jiangsu Changjiang Electronics Technology Co., Ltd – TRANSISTOR（ NPN ） | |||
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C1815LT1
C1815LT1 TRANSISTOR (NPN)
* âGâ Lead(Pb)-Free
FEATURES
Power dissipation
PCM:
0.2 W (Tamb=25 )
Collector current
ICM:
0.15 A
Collector-base voltage
V(BR)CBO:
60 V
Operating and storage junction temperature range
TJ, Tstg: -55 to +150
SOT-23
1. BASE
2. EMITTER
3. COLLECTOR
2. 4
1. 3
Unit: mm
ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Symbol
V(BR)CBO
V(BR)CEO
ICBO
ICEO
IEBO
hFE(1)
VCE(sat)
VBE(sat)
Test conditions
Ic= 100µA, IE=0
Ic = 0.1mA, IB =0
VCB=60V, IE=0
VCE=50V, IB=0
VEB= 5V, IC=0
VCE= 6V, IC= 2mA
IC=100 mA, IB= 10mA
IC=100 mA, IB= 10mA
MIN
60
50
130
TYP
Transition frequency
fT
VCE=10V, IC= 1mA
80
f=30MHz
MAX UNIT
V
V
0.1
µA
0.1
µA
0.1
µA
400
0.25
V
1
V
MHz
CLASSIFICATION OF hFE(1)
Rank
Range
DEVICE MARKING
L
130-200
C1815LT1=HF
H
200- 400
WEITRON
http://www.weitron.com.tw
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