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| C1815 Datasheet, PDF (1/2 Pages) List of Unclassifed Manufacturers – TRANSISTOR NPN | |||
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C1815
NPN Plastic-Encapsulate Transistors
P b Lead(Pb)-Free
FEATURES
Power dissipation
MAXIMUM RATINGS* TA=25â unless otherwise noted
Symbol
Parameter
Value
Units
VCBO
VCEO
VEBO
IC
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
60
V
50
V
5
V
150
mA
PD
Total Device Dissipation
400
mW
TJ, Tstg Junction and Storage Temperature
-55-150
â
*These ratings are limiting values above which the serviceability
of any semiconductor device may be impaired.
TOâ92
1.EMITTER
2.COLLECTOR
3.BASE
123
ELECTRICAL CHARACTERISTICSï¼Tamb=25â unless otherwise specifiedï¼
Parameter
Symbol
Test conditions
MIN
TYP
MAX
Collector-base breakdown voltage
V(BR)CBO Ic= 100 uA, IE=0
60
Collector-emitter breakdown voltage V(BR)CEO Ic= 0. 1 mA, IB=0
50
Emitter-base breakdown voltage
V(BR)EBO IE= 100 uA, IC=0
5
Collector cut-off current
ICBO
VCB= 60 V , IE=0
Collector cut-off current
ICEO
VCE= 50 V , IB=0
Emitter cut-off current
IEBO
VEB= 5 V, IC=0
DC current gain
hFE(1)
VCE= 6 V, IC= 2mA
70
Collector-emitter saturation voltage VCE(sat)
IC= 100mA, IB= 10 mA
Base-emitter saturation voltage
Transition frequency
Collector Output Capacitance
Noise Figure
VBE(sat)
IC= 100 mA, IB= 10mA
fT
VCE= 10 V, IC= 1mA
f=30MHz
80
Cob
VCB=10V,IE=0
f=1MHZ
NF
VCE= 6 V, IC=0.1 mA
f =1KHz,RG=10K
0.1
0.1
0.1
700
0.25
1
3.5
10
UNIT
V
V
V
uA
uA
uA
V
V
MHz
pF
dB
CLASSIFICATION OF hFE(1)
Rank
O
Range
70-140
Y
120-240
GR
200-400
BL
350-700
WEITRON
1/2
http://www.weitron.com.tw
23-Nov-06
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