BSS84 Datasheet, PDF (1/4 Pages) NXP Semiconductors – P-channel enhancement mode vertical D-MOS transistor

BSS84
Small Signal MOSFET
P-Channel
3 DRAIN
Features:
*Low On-Resistance : 10
*Low Input Capacitance: 30PF
*Low Out put Capacitance : 10PF
*Low Threshole : 2.0V
*Fast Switching Speed : 2.5ns
1
GATE
Application:
* DC to DC Converter
* Cellular & PCMCIA Card
* Cordless Telephone
* Power Management in Portable and Battery etc.
2
SOURCE
SOT-23
3
1
2
Maximum Ratings (TA=25 C Unless Otherwise Specified)
Rating
Symbol
Value
Drain-Source Voltage
Gate-Source Voltage
V_DSS
50
V_GS
-^{+ 20}
Continuous Drain Current (TA=25 C)
I_D
130
Pulsed Drain Current(tp 10us)
I_DM
520
Power Dissipation (TA=25 C)
P_D
225
Maximax Junction-to-Ambient
R _JA
556
Operating Junction and Storage
Temperature Range
T_J, Tstg
-55 to 150
Unite
V
V
mA
mA
mW
C/W
C
Device Marking
BSS84=PD
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