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| BSS138W Datasheet, PDF (1/5 Pages) Diodes Incorporated – N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR | |||
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N-Channel POWER MOSFET
P b Lead(Pb)-Free
3 DRAIN
Description:
1
GATE
* Typical applications are dcâdc converters,
power management in portable and batteryâpowered
products such as computers, printers, PCMCIA cards,
cellular and cordless telephones.
Features:
* Simple Drive Requirement
* Small Package Outline
2 SOURCE
BSS138W
3
1
2
SOT-323(SC-70)
Maximum Ratings (TA=25°C Unless Otherwise Specified)
Rating
Symbol
Value
Drain-Source Voltage
VDS
50
Gate-Source Voltage
VGS
±20
Continuous Drain Current
VGS = (TA=25°C)
ID
200
Pulsed Drain Current (tp ⤠10µS)
IDM
800
Power Dissipation (TA=25°C)
PD
150
Maximax Junction-to-Ambient
R θJA
556
Operating Junction Temperature Range
TJ
+150
Storage Temperature Range
Tstg
-55 to +150
Maximum Lead Temperature for Soldering
Purposes, for 10 seconds
TL
260
Device Marking
BSS138W = J1
WEITRON
1/5
http://www.weitron.com.tw
Unit
V
V
mA
mA
mW
°C/W
°C
°C
°C
10-Apr-06
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