BSS138 Datasheet, PDF (1/4 Pages) Zetex Semiconductors – N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET

BSS138
Small Signal MOSFET
N-Channel
3 DRAIN
Features:
*Low On-Resistance : 3.5 Ω
*Low Input Capacitance: 40PF
*Low Out put Capacitance : 12PF
*Low Threshole :1 .5V
*Fast Switching Speed : 20ns
1
GATE
Application:
* DC to DC Converter
* Cellular & PCMCIA Card
* Cordless Telephone
* Power Management in Portable and Battery etc.
2
SOURCE
SOT-23
3
1
2
Maximum Ratings (TA=25 C Unless Otherwise Specified)
Rating
Symbol
Value
Unit
Drain-Source Voltage
Gate-Source Voltage
V_DSS
50
V
V_GS
+_ ₂₀
V
Continuous Drain Current (TA=25 C)
I_D
200
mA
Pulsed Drain Current(tp 10us)
I_DM
800
mA
Power Dissipation (TA=25 C)
Maximax Junction-to-Ambient
P_D
225
mW
R _θJA
556
C/W
Operating Junction and Storage
Temperature Range
T_J, Tstg
-55 to 150
C
Device Marking
BSS138=J1
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