BSS123 Datasheet, PDF (1/3 Pages) NXP Semiconductors – N-channel enhancement mode vertical D-MOS transistor

BSS123
Power MOSFET
N-Channel
3 DRAIN
Features:
*Low On-Resistance : 6.0 Ω
*Low Input Capacitance: 20PF
*Low Out put Capacitance : 9PF
*Low Threshole :2.8V
*Fast Switching Speed : 20ns
1
GATE
Application:
* DC to DC Converter
* Cellular & PCMCIA Card
* Cordless Telephone
* Power Management in Portable and Battery etc.
2
SOURCE
SOT-23
3
1
2
Maximum Ratings (TA=25 C Unless Otherwise Specified)
Rating
Symbol
Value
Unit
Drain-Source Voltage
Gate-Source Voltage
V_DSS
100
V
V_GS
+_ ₂₀
V
Continuous Drain Current (TA=25 C)
I_D
170
mA
Pulsed Drain Current ⁽¹⁾
I_DM
680
mA
Power Dissipation (TA=25 C)⁽²⁾
P_D
225
mW
Maximax Junction-to-Ambient
R _θJA
556
C/W
Operating Junction and Storage
Temperature Range
T_J, Tstg
-55 to 150
C
Device Marking
BSS123=SA
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