BCX56 Datasheet, PDF (1/3 Pages) Weitron Technology – NPN Plastic-Encapsulate Transistor

NPN Plastic-Encapsulate Transistor
P b Lead(Pb)-Free
BCX56
1. BASE
2. COLLECTOR
3. EMITTER
1
2
3
SOT-89
MAXIMUM RATINGS ( T_A=25°C unless otherwise noted)
Rating
Symbol
Collector-Base Voltage
V_CBO
Collector-Emitter Voltage
V_CEO
Emitter-Base Voltage
V_EBO
Collector Current Continuous
IC
Total Device Dissipation T_A=25°C
PD
Junction Temperature Range
TJ
Storage Temperature Range
Tstg
Value
100
80
5.0
1.0
500
+150
-55 to +150
Unit
V
V
V
A
mW
˚C
˚C
Device Marking
BCX56=BH , BCX56-10=BK , BCX56-16=BL
OFF CHARACTERISTICS
Characteristics
Collector-Base Breakdown Voltage, I_C = 100µA, I_E = 0
Collector-Emitter Breakdown Voltage, I_C = 10mA, I_B = 0
Emitter-Base Breakdown Voltage, I_E = 10µA, I_C = 0
Collector Cut-off Current, V_CB = 30V, I_E = 0
Emitter Cut-off Current, V_EB = 5.0V, I_C = 0
Symbol Min Max
V(BR)_CBO
-
100
V(BR)_CEO
-
80
V(BR)_EBO
-
5.0
I_CBO
-
0.1
I_EBO
-
0.1
Unit
V
V
V
µA
µA
WEITRON
1/3
http://www.weitron.com.tw
15-Feb-06