BCX54 Datasheet, PDF (1/2 Pages) NXP Semiconductors – NPN medium power transistors

BCX54/BCX55/BCX56
NPN Plastic-Encapsulate Transistor
P b Lead(Pb)-Free
FEATURES
High current
Low voltage
Medium power general purposes
Driver stages of audio amplifiers.
MAKING: BCX54:BA BCX54-10:BC BCX54-16:BD
BCX55:BE BCX55-10:BG BCX52-16:BM
BCX56:BH BCX56-10:BK BCX56-16:BL
1. BASE
2. COLLECTOR
3. EMITTER
1
2
3
SOT-89
MAXIMUM RATINGS (T_A=25℃ unless otherwise noted)
Symbol
Parameter
VCBO
Collector-Base Voltage
BCX54
BCX55
BCX56
VCEO
Collector-Emitter Voltage
VEBO
IC
PC
TJ
Tstg
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
BCX54
BCX55
BCX56
Value
45
60
100
45
60
80
5
1
500
150
-65-150
Units
V
V
V
A
mW
℃
℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Symbol Test conditions
MIN
Collector-base breakdown voltage
V(BR)CBO
IC=100μA,IE=0
BCX54 45
BCX55 60
BC56 100
Collector-emitter breakdown voltage
V(BR)CEO
IC=1mA,IB=0
BCX54 45
BCX55 60
BCX56 80
Emitter-base breakdown voltage
V(BR)EBO IE=100μA,IC=0
5
Collector cut-off current
ICBO
VCB=30V,IE=0
Emitter cut-off current
IEBO
VEB=5V,IC=0
hFE(1) VCE=2V,IC=5mA
40
DC current gain
hFE(2) VCE=2V,IC=150mA
63
hFE(3) VCE=2V,IC=500mA
25
Collector-emitter saturation voltage
VCE(sat) IC=-500mA,IB=-50mA
Base-emitter voltage
Transition frequency
VBE
VCE=2V,IC=500mA
fT
VCE=5V,IC=10mA,f=100MHz
TYP
130
MAX UNIT
V
V
V
0.1
μA
0.1
μA
250
0.5
V
1
V
MHz
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25-Jun-08