BCP69 Datasheet, PDF (1/4 Pages) NXP Semiconductors – PNP medium power transistor

PNP Silicon Epitaxial Transistor
P b Lead(Pb)-Free
COLLECTOR
2, 4
BASE
1
3
EMITTER
ABSOLUTE MAXIMUM RATINGS (T_A=25 C)
Rating
Collector to Base Voltage
Collector to Emitter Voltage
Collector to Base Voltage
Collector Current
Total Device Disspation T_A=25°C
Junction Temperature
Storage Temperature
Symbol
V_CBO
V_CEO
V_EBO
I_C
P_D
Tj
Tstg
BCP69
1.BASE
2.COLLECTOR
3.EMITTER
4.COLLECTOR
4
1
2
3
SOT-223
Value
Unit
-25
V
-20
V
-5.0
V
-1.0
A
1.5
W
+150
˚C
-65 to +150
˚C
Device Marking
BCP69 = BCP69
ELECTRICAL CHARACTERISTICS
Characteristics
Collector-Base Breakdown Voltage
I_C=-100µA, I_E=0
Collector-Emitter Breakdown Voltage
I_C=-1mA, I_B=0
Emitter-Base Breakdown Voltage
I_E=-10µA, I_C=0
Collector Cut-Off Current
V_CB=-25V, I_E=0
Emitter-Cut-Off Current
V_EB=-5V, I_C=0
Symbol Min
Max
Max
Unit
BV_CBO
-25
-
-
V
BV_CEO
-20
-
-
V
BV_EBO
-5.0
-
-
V
I_CBO
-
-
-10
µA
I_EBO
-
-
-10
µA
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14-Feb-06