BC847S Datasheet, PDF (1/3 Pages) Siemens Semiconductor Group – NPN Silicon AF Transistor Array (For AF input stages and driver applications High current gain)

Dual General Purpose Transistor
NPN Silicon
P b Lead(Pb)-Free
Maximum Ratings
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current-Continuous
Thermal Characteristics
Characteristics
Total Device Dissipation TA=25 C
Junction Temperature
Storage Temperature
Device Marking
BC847S=1C
Symbol
VCEO
VCBO
VEBO
IC
Symbol
P_D
T_J
T_stg
Electrical Characteristics (TA=25 C Unless Otherwise noted)
Characteristics
Off Characteristics
Collector-Emitter Breakdown Voltage (I_C=10mA ,I _B=0)
Collector-Base Breakdown Voltage (I_C=10 µA ,I_E=0)
Emitter-Base Breakdown Voltage (I_E=10 µA , I_C=0)
BC847S
3
2
1
4
5
6
NPN+NPN
6 ₅₄
1
23
SOT -363(SC-88)
Value
Unit
45
V
50
V
6
V
200
mA
Max
Unit
200
mW
+150
°C
-55 to +150
°C
Symbol
Min Max Unit
V(BR)CEO
45
-
V
V(BR)CBO
50
-
V
V(BR)EBO
6
-
V
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05-Feb-07