BC556 Datasheet, PDF (1/5 Pages) Motorola, Inc – Amplifier Transistors

PNP General Purpose Transistor
Maximum Ratings _{( TA=25 C unless otherwise noted)}
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current Continuous
Symbol
VECO
VCBO
VEBO
lC
BC556
-65
-80
-5
BC556, A/B
BC557, A/B/C
BC558, A/B/C
COLLECTOR
3
2
BASE
1
EMITTER
TO-92
1
2
3
BC557
-45
-50
-5
100
BC558
-30
-30
-5
Unit
Vdc
Vdc
Vdc
mAdc
THERMAL CHARACTERISTICS
Characteristics
Total Device Dissipation
Alumina Substrate, TA = 25 C
BC556
BC557
BC558
Junction and Storage, Temperature
BC556
BC557
BC558
Symbol
PD
TJ, _Tstg
Max
625
-55 to +150
Unit
mW/ C
C
ELECTRICAL CHARACTERISTICS
Characteristics
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
(lC= 2 mAdc. lB=0)
Collector-Base Breakdown Voltage
(lC= 100 mAdc. lE=0)
Emitter-Base Breakdown Voltage
(l_E = 100 mAdc. lC=0)
Symbol Min Max
Unit
BC556
-65
BC557
V_{(BR)CEO -45}
Vdc
BC558
-30
BC556
-80
BC557
V_{(BR)CBO -50}
Vdc
BC558
-30
BC556
BC557
V_{(BR)EBO -5}
Vdc
BC558
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26-Apr-05