BC546_08 Datasheet, PDF (1/5 Pages) Weitron Technology – NPN General Purpose Transistor

BC546, A/B
BC547, A/B/C
BC548, A/B/C
NPN General Purpose Transistor
COLLECTOR
1
2
BASE
Maximum Ratings _{( TA =25°C unless otherwise noted)}
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current Continuous
Symbol
VECO
VCBO
VEBO
lC
BC546
65
80
6
3
EMITTER
BC547
45
50
6
100
TO-92
1
2
3
BC548
30
30
6
Unit
Vdc
Vdc
Vdc
mAdc
THERMAL CHARACTERISTICS
Characteristics
Total Device Dissipation
Alumina Substrate, TA = 25℃C
BC546
BC547
BC548
Junction and Storage, Temperature
BC546
BC547
BC548
Symbol
PD
TJ, _Tstg
Max
625
-55 to +150
Unit
mW/ ℃C
℃C
ELECTRICAL CHARACTERISTICS
Characteristics
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
(lC= 1 mAdc. lB=0)
Collector-Base Breakdown Voltage
(lC= 100 ? Adc. lE=0)
Emitter-Base Breakdown Voltage
(lE = 10 ? Adc. lC =0)
Symbol Min Max
Unit
BC546
65
BC547
V_{(BR)CEO 45}
Vdc
BC548
30
BC546
80
BC547
V_{(BR)CBO 50}
Vdc
BC548
30
BC546
BC547
V_{(BR)EBO 6}
Vdc
BC548
WEITRON
1/5
http://www.weitron.com.tw
Rev.C 30-May-08