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| BC337 Datasheet, PDF (1/4 Pages) Motorola, Inc – Amplifier Transistor | |||
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NPN General Purpose Transistor
P b Lead(Pb)-Free
BC337/BC338
COLLECTOR
1
2
BASE
3
EMITTER
TO-92
1
2
3
Maximum Ratings(TA=25°C unless otherwise noted)
Rating
Symbol
BC337
BC338
Collector-Base voltage
VCBO
50
30
Collector-Emitter voltage
VCEO
45
25
Emitter-Base voltage
VEBO
5.0
5.0
Collector Current Continuous
lC
800
Total Device Dissipation
Alumina Substrate,TA=25°C
PD
625
Operating Junction Temperature Range
TJ
-55 to +150
Storage Junction Temperature Range
Tstg
-55 to +150
Unit
V
V
V
mA
mW/°C
°C
°C
ELECTRICAL CHARACTERISTICS
Characteristics
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage
IC=100µA, IE=0
Collector-Emitter Breakdown Voltage
IC=10mA, IB=0
Emitter-Base Breakdown Voltage
IC=10µA, IC=0
BC337
BC338
BC337
BC338
BC337
BC338
Symbol Min Typ Max Unit
V(BR)CBO
50
-
30
V(BR)CEO
45
-
25
V(BR)EBO
5.0
-
-
V
-
V
-
Vdc
WEITRON
1/3
http://www.weitron.com.tw
30-Jun-06
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