A733LT1 Datasheet, PDF (1/4 Pages) Jiangsu Changjiang Electronics Technology Co., Ltd – TRANSISTOR（ PNP ）

General Purpose Transistor
PNP Silicon
* “G” Lead(Pb)-Free
MAXIMUM RATINGS (Ta=25 C)
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current -Continuous
THERMAL CHARACTERISTICS
Characteristics
Total Device Dissipation FR-5 Board ⁽¹⁾
TA =25 C
Derate above 25 C
Thermal Resistance, Junction Ambient
Junction and Storage, Temperature
Device Marking
A733=CS
Symbol
VCEO
VCBO
VEBO
IC
Symbol
PD
R _θJA
T_J, Tstg
ELECTRICAL CHARACTERISTICS
Characteristics
Collector-Emitter Breakdown Voltage (IC= -1 mAdc, IB=0)
Collector-Base Breakdown Voltage (IC= -5 uAdc, IE=0)
Emitter-Base Breakdown Voltage (IE= -50 uAdc, IC=0)
Collector Cutoff Current (VCB= -60Vdc, IE=0)
Emitter Cutoff Current (VEB= -5.0 Vdc, IC=0)
1. FR-5=1.0 ^I I0.75 ^I I 0.062 in
A733LT1
COLLECTOR
BASE
EMITTER
3
1
2
SOT-23
Value
-50
-60
-5.0
-150
Value
200
1.6
625
-55 to +150
Unit
Vdc
Vdc
Vdc
mAdc
Unit
mW
mW/ C
C/W
C
Symbol
Min
Max
Unit
V(BR)CEO -50
-
Vdc
V(BR)CBO ^-60
-
Vdc
V(BR)EBO _-5.0
-
Vdc
ICBO
IEBO
-
-0.1
uAdc
-
-0.1
uAdc
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