A1015LT1 Datasheet, PDF (1/2 Pages) Jiangsu Changjiang Electronics Technology Co., Ltd – TRANSISTOR（ PNP ）

A1015LT1
A1015LT1 TRANSISTOR (PNP)
* “G” Lead(Pb)-Free
FEATURES
Power dissipation
P_CM:
0.2 W (Tamb=25 )
Collector current
I_CM:
-0.15 A
Collector-base voltage
V_(BR)CBO:
-50 V
Operating and storage junction temperature range
T_J, T_stg: -55 to +150
SOT-23
1. BASE
2. EMITTER
3. COLLECTOR
2. 4
1. 3
Unit: mm
ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
ICEO
IEBO
HFE(1)
VCE(sat)
VBE(sat)
fT
Test conditions
Ic= -100µA, IE=0
Ic= -0.1mA, IB =0
IE= -10µA, IC=0
VCB=-50V , IE=0
VCE= -50V , IB=0
VEB=- 5V , IC=0
VCE=-6V, IC= -2mA
IC=-100 mA, IB= -10mA
IC=-100 mA, IB= -10mA
VCE=-10V, IC= -1mA
f=30MHz
MIN
-50
- 50
-5
130
80
TYP
MAX UNIT
V
V
V
-0.1
µA
-0.1
µA
-0.1
µA
400
-0.3
V
-1.1
V
MHz
CLASSIFICATION OF H_FE(1)
Rank
Range
L
130-200
MARKING
BA
H
200- 40 0
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