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| A1015 Datasheet, PDF (1/4 Pages) Weitron Technology – PNP General Purpose Transistors | |||
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PNP General Purpose Transistors
P b Lead(Pb)-Free
A1015
TO-92
1. EMITTER
1
2. COLLECTOR
3. BASE
2
3
MAXIMUM RATINGS* (TA=25°C unless otherwise noted)
Rating
Symbol
Value
Unit
Collector-Emitter Voltage
VCEO
-50
V
Collector-Base Voltage
VCBO
-50
V
Emitter-Base Voltage
VEBO
-5.0
V
Collector Current Continuous
IC
-150
mA
Total Device Dissipation TA=25°C
PD
0.4
W
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55 to + 150
°C
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
ELECTRICAL CHARACTERISTICS
Characteristics
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage, IC = -100µA, IE = 0
Collector-Emitter Breakdown Voltage, IC = -0.1mA, IB = 0
Emitter-Base Breakdown Voltage, IE = -100µA, IC = 0
Collector Cut-oï¬ Current, VCB = -50V, IE = 0
Collector Cut-oï¬ Current, VCE = -50V, IB = 0
Emitter Cut-oï¬ Current, VEB = -5.0V, IC = 0
Symbol Min Max Unit
V(BR)CBO
-
-50
V
V(BR)CEO
-
-50
V
V(BR)EBO
-
-5.0
V
ICBO
-
-0.1
µA
ICEO
-
-0.1
µA
IEBO
-
-0.1
µA
WEITRON
1/4
http://www.weitron.com.tw
14-Feb-06
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