3DD13003B Datasheet, PDF (1/3 Pages) Weitron Technology – NPNPlastic-Encapsulate Transistor

WEITRON
NPN Plastic-Encapsulate Transistor
P b Lead(Pb)-Free
FEATURES :
• power switching applications
3DD13003B
1. EMITTER
2. COLLECTOR
3. BASE
TO-92
MAXIMUM RATINGS (TA=25°C unless otherwise noted)
Parameter
Symbol
Collector-Base Voltage
VCBO
Collector-Emitter Voltage
VCEO
Emitter-Base Voltage
VEBO
Collector Current -Continuous
IC
Collector Power Dissipation
PC
Junction Temperature
TJ
Storage Temperature
Tstg
Value
700
400
9
1.5
0.9
150
-55 to +150
Units
V
V
V
A
W
°C
°C
ELECTRICAL CHARACTERISTICS (Tamb=25°C unless otherwise specified)
Parameter
Symbol Test conditions _MIN
Collector-base breakdown voltage
V(BR)CBO IC= 1mA, IE=0
700
Collector-emitter breakdown voltage ^{V(BR)CEO IC= 10mA, IB=0}
400
Emitter-base breakdown voltage
V(BR)EBO IE= 1mA, IC=0
9
Collector cut-off current
ICBO _{VCB= 700V, IE=0}
Collector cut-off current
ICEO VCE= 400V, IB=0
Emitter cut-off current
DC current gain
IEBO VEB= 7V, IC=0
hFE
VCE= 10V, IC= 0.4 A
20
Collector-emitter saturation voltage
VCE(sat)1 IC=1.5A,IB= 0.5A
VCE(sat)2 IC=0.5A, IB= 0.1A
Base-emitter saturation voltage
VBE(sat) IC=0.5A, IB=0.1A
Transition Frequency
fT
VCE=10V,IC=100mA,
f =1MHz
4
Fall time
Storage time
t_f
IC=1A
ts
IB1=-IB2=0.2A
TYP
MAX
100
50
10
40
3
0.8
1
0.7
4
Units
V
V
V
µA
µA
µA
V
V
V
MHz
µs
µs
CLASSIFICATION OF h_FE
Rank
Range
20-25
25-30
30-35
35-40
WEITRON
1/3
hpp://www.weitron.com.tw
10-Nov-2010