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| 2SD965 Datasheet, PDF (1/2 Pages) Panasonic Semiconductor – Silicon NPN epitaxial planer type(For low-frequency power amplification) | |||
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WEITRON
NPN Transistor
P b Lead(Pb)-Free
COLLECTOR
2.
FEATURES :
* Flash unit of camera
* Switching circuit
3.
BASE
1.
EMITTER
2SD965
1. EMITTER
2. COLLECTOR
3. BASE
TO-92
MAXIMUM RATINGS (TA=25â unless otherwise noted)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Symbol
VCBO
VCEO
VEBO
IC
PC
TJ
Storage Temperature
Tstg
Value
42
22
6
5
750
150
-55-150
Units
V
V
V
A
mW
â
â
ELECTRICAL CHARACTERISTICS (Tamb=25â unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
hFE(1)
hFE(2)
hFE(3)
VCE(sat)
fT
Test conditions
IC=0.1mA, IE=0
IC=1mA, IB=0
IE= 10μA, IC=0
VCB=30V,IE=0
VEB=6V, IC=0
VCE=2V, IC= 0.15 mA
VCE= 2V,IC = 500 mA
VCE=2V, IC = 2A
IC=3000mA,IB=100 mA
VCE=6V,
IC=50mA,f=30MHz
MIN
42
22
6
150
340
150
TYP
150
MAX
0.1
0.1
UNIT
V
V
V
μA
μA
2000
0.35
V
MHz
CLASSIFICATION OF hFE(2)
Rank
R
Range
340-600
T
560-950
V
900-2000
WEITRON
1/2
hpp://www.weitron.com.tw
01-Sep-09
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