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| 2SD880 Datasheet, PDF (1/3 Pages) Mospec Semiconductor – POWER TRANSISTORS(3A,60V,30W) | |||
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NPN Silicon Epitaxial Power Transistor
P b Lead(Pb)-Free
COLLECTOR
2
FEATURES:
* Low frequency power amplifier
* Complement to 2SB834
BASE
1
3
EMITTER
MAXIMUM RATINGS (TA=25â unless otherwise noted)
Symbol
Parameter
Value
VCBO
Collector-Base Voltage
60
VCEO
Collector-Emitter Voltage
60
VEBO
Emitter-Base Voltage
7
IC
Collector Current -Continuous
3
PC
Collector Power Dissipation
1.5
TJ
Junction Temperature
150
Tstg
Storage Temperature
-55-150
Units
V
V
V
A
W
â
â
2SD880
1
2
3
1. BASE
2. COLLECTOR
3. EMITTER TO-220
ELECTRICAL CHARACTERISTICS (Tamb=25â unless otherwise specified)
Parameter
Symbol
Test conditions
MIN
Collector-base breakdown voltage
V(BR)CBO IC=100µA, IE=0
60
Collector-emitter breakdown voltage
V(BR)CEO IC=50mA, IB=0
60
Emitter-base breakdown voltage
V(BR)EBO IE= 100µA, IC=0
7
Collector cut-off current
ICBO
VCB=60V, IE=0
Emitter cut-off current
IEBO
VEB=7V, IC=0
DC current gain
hFE
VCE=5V, IC=500mA
60
Collector-emitter saturation voltage
VCE (sat)
IC=3A, IB=300mA
Base-emitter voltage
VBE
IC=0.5A, VCE= 5V
Transition Frequency
fT
VCE=5 V, IC=500mA
Collector output capacitance
Cob
VCB=10V, IE=0, f=1MHz
Turn on time
Storage time
Fall time
ton
IB1=-IB2=0.2A, IC=2A
ts
VCC=30V, PW=20µs
tf
TYP
3
70
0.8
1.5
0.8
MAX
100
100
300
1
1
UNIT
V
V
V
µA
µA
V
V
MHz
pF
µs
µs
µs
CLASSIFICATION OF hFE
Rank
Range
O
60-120
Y
100-200
GR
150-300
WEITRON
1/3
http://www.weitron.com.tw
02-Feb-07
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