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| 2SD313 Datasheet, PDF (1/4 Pages) Mospec Semiconductor – POWER TRANSISTORS(3A,60V,30W) | |||
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NPN Silicon Epitaxial Power Transistor
P b Lead(Pb)-Free
Features:
* DC Current Gain hFE = 40-320 @IC = 1.0A
* Low VCE(sat) ⤠1.0V(MAX) @IC = 2.0A, IB = 0.2A
* Complememtary to NPN 2SB507
COLLECTOR
2
BASE
1
3
EMITTER
ABSOLUTE MAXIMUM RATINGS (TA=25ºC)
Rating
Collector to Base Voltage
Symbol
VCBO
Collector to Emitter Voltage
VCEO
Collector to Base Voltage
VEBO
Collector Current
IC
Total Device Disspation
TA=25°C
PD
TC=25°C
Derate above 25°C
Junction Temperature
TJ
Storage Temperature
Tstg
2SD313
1
2
3
1. BASE
2. COLLECTOR
3. EMITTER TO-220
Value
60
60
5.0
3.0
1.75
30
0.24
+150
-55 to +150
Unit
V
V
V
A
W
W/ËC
ËC
ËC
ELECTRICAL CHARACTERISTICS
Characteristics
Collector-Base Breakdown Voltage
IC=100µA, IE=0
Collector-Emitter Breakdown Voltage
IC=1mA, IB=0
Emitter-Base Breakdown Voltage
IE=100µA, IC=0
Collector Cut-Oï¬ Current
VCB=60V, IE=0
Emitter-Cut-Oï¬ Current
VEB=60V,IE=0
Emitter-Cut-Oï¬ Current
VEB=4.0V, IC=0
WEITRON
http://www.weitron.com.tw
Symbol Min
BVCBO
60
BVCEO
60
BVEBO 5.0
ICBO
-
ICEO
-
IEBO
-
Max
-
-
-
-
-
-
Max
-
-
-
100
1.0
100
Unit
V
V
V
µA
mA
µA
1/4
06-Feb-07
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