2SD2150 Datasheet, PDF (1/4 Pages) Rohm – Low Frequency Transistor(20V, 3A)

NPN Epitaxial Planar Transistors
P b Lead(Pb)-Free
ABSOLUTE MAXIMUM RATINGS (T_A=25˚C)
Rating
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
Symbol
V_CBO
V_CEO
V_EBO
I_C
P_D
T_j
T_stg
2SD2150
SOT-89
1
2
1. BASE
3
2. COLLECTOR
3. EMITTER
Limits
40
20
6
3
500
150
-55 to +150
Unit
V
V
V
A
mW
˚C
˚C
ELECTRICAL CHARACTERISTICS(T_A=25˚Cunless otherwise noted)
Parameter
Collector-Base Breakdown Voltage
I_C=50µA, I_E=0
Collector-Emitter Breakdown Voltage
I_C=1mA, I_B=0
Emitter-Base Breakdown Voltage
I_E=50µA, I_C=0
Collector Cutoff Current
V_CB=30V, I_E=0
Emitter Cutoff Current
V_EB=5V, I_E=0
Symbol
Min
Typ
Max
Unit
BV_CBO
40
-
-
V
BV_CEO
20
-
-
V
BV_EBO
6
-
-
V
I_CBO
-
-
0.1
µA
I_EBO
-
-
0.1
µA
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15-Aug-05