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| 2SD1899 Datasheet, PDF (1/4 Pages) TRANSYS Electronics Limited – TO-252 Plastic-Encapsulated Transistors | |||
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2SD1899
NPN PLASTIC ENCAPSULATE TRANSISTORS
P b Lead(Pb)-Free
1.BASE
2.COLLECTOR
3.EMITTER
23
1
MAXIMUM RATINGS (TA=25â unless otherwise noted)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
PC
TJ
Tstg
Value
60
60
7
3
1
150
-55-150
Units
V
V
V
A
W
â
â
D-PAK(TO-252)
ELECTRICAL CHARACTERISTICS (Tamb=25â unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
Turn on Time
Switching Time
Storage Time
Fall Time
Symbol Test conditions
V(BR)CBO IC=100μA,IE=0
V(BR)CEO IC =1mA,IB=0
V(BR)EBO IE=100μA,IC=0
ICBO
VCB=60V,IE=0
IEBO
VEB=7V,IC=0
hFE(1) VCE=2V,IC=200mA
hFE(2) VCE=2V,IC=600mA
hFE(3) VCE=2V,IC=2A
VCE(sat) IC=1.5A,IB=150mA
VBE(sat) IC=1.5A,IB=150mA
fT
VCE=5V,IC=1.5A
Cob
VCB=10V,IE=0,f=1MHz
ton
tstg
VCC=10V,IC=1A,IB1=-IB2=-0.1A
tf
MIN TYP MAX UNIT
60
-
-
V
60
-
-
V
7
-
-
V
-
-
10
μA
-
-
10
μA
60
-
-
100
-
400
50
-
-
-
-
0.25
V
-
-
1.2
V
-
120
-
MHz
-
30
-
pF
-
-
0.5
-
-
2.0
μs
-
-
0.5
CLASSIFICATION OF hFE(2)
Rank
M
Range
100-200
L
160-320
K
200-400
WEITRON
1/4
http://www.weitron.com.tw
13-Oct-08
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