2SD1898 Datasheet, PDF (1/4 Pages) Rohm – Power Transistor (80V, 1A)

Epitaxial Planar NPN Transistors
ABSOLUTE MAXIMUM RATINGS (Ta=25 ^C)
Rating
Collector-Base Voltage
Symbol
VCBO
Collector-Emitter Voltage
VCEO
Emitter-Base Voltage
Collector Current
VEBO
IC
ICP
Collector Power Dissipation
Junction Temperature, Storage Temperature
PC
Tj, Tstg
* Single pulse Pw = 20ms
2SD1898
SOT-89
1
2
1. BASE
3
2. COLLECTOR
3. EMITTER
Limits
100
80
5
1
2
0.5
150, -55 to +150
Unit
Vdc
Vdc
Vdc
A(DC)
A (Pulse)*
W
C
ELECTRICAL CHARACTERISTICS ^(Ta=25%C ^{unless otherwise noted )}
Parameter
Symbol
Min Typ Max Unit
Collector-Base Breakdown Voltage(Ic=50uA, I_E=0)
BV_CBO
100
-
-
V
Collector-Emitter Breakdown Voltage(Ic=1mA,I_B=0 )
BV_CEO
80
-
-
V
Emitter-Base Breakdown Voltage(I_E=50uA, I_C=0)
BV_EBO
5
-
-
V
Collector Cutoff Current(V_CB=80V, I_E=0)
ICBO
-
-
1
uA
Emitter Cutoff Current(V_EB=4V, I_C=0)
IEBO
-
-
1
uA
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