2SD1802 Datasheet, PDF (1/4 Pages) Weitron Technology – NPN PLASTIC ENCAPSULATE TRANSISTORS

NPN PLASTIC ENCAPSULATE TRANSISTORS
P b Lead(Pb)-Free
ABSOLUTE MAXIMUM RATINGS (T_A=25˚C)
Rating
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
Symbol
V_CBO
V_CEO
V_EBO
I_C
P_D
T_j
T_stg
2SD1802
1.BASE
2.COLLECTOR
3.EMITTER
23
1
D-PAK(TO-252)
Limits
Unit
60
V
50
V
6.0
V
3.0
µA
1.0
W
-55 to +150
˚C
-55 to +150
˚C
ELECTRICAL CHARACTERISTICS(T_A=25˚Cunless otherwise noted)
Parameter
Collector-Base Breakdown Voltage
I_C=10µA
Collector-Emitter Breakdown Voltage
I_C=1.0mA
Emitter-Base Breakdown Voltage
I_E=10µA
Collector Cutoff Current
V_CB=40V
Collector Cutoff Current
V_EB =4.0V
Symbol
Min
BV_CBO
60
BV_CEO
50
BV_EBO
6.0
I_CBO
-
I_EBO
-
Typ Max Unit
-
-
V
-
-
V
-
-
V
-
1.0
µA
-
1.0
µA
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14-Jul-06