2SD1664 Datasheet, PDF (1/5 Pages) Rohm – Medium Power Transistor (32V, 1A)

NPN Epitaxial Planar Transistors
P b Lead(Pb)-Free
Features:
* Low VCE(sat), VCE(sat)=0.15V(typical).(IC/IB=500mA/50mA)
ABSOLUTE MAXIMUM RATINGS (T_A=25˚C)
Rating
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
Symbol
V_CBO
V_CEO
V_EBO
I_C
P_D
T_j
T_stg
2SD1664
1. BASE
2. COLLECTOR
3. EMITTER
1
2
3
SOT-89
Limits
Unit
40
V
32
V
5.0
V
1.0
A
0.5
W
-55 to +150
˚C
-55 to +150
˚C
ELECTRICAL CHARACTERISTICS(T_A=25˚C unless otherwise noted)
Parameter
Collector-Base Breakdown Voltage
I_C=50µA, I_E=0
Collector-Emitter Breakdown Voltage
I_C=1mA, I_B=0
Emitter-Base Breakdown Voltage
I_E=50µA, I _C =0
Symbol
BV_CBO
BV_CEO
BV_EBO
Min
Typ Max Unit
40
-
-
V
32
-
-
V
5
-
-
V
V_CB=20V, I_E=0
I_CBO
-
-
0.5
µA
V_EB=4V, I_C=0
I_EBO
-
-
0.5
µA
WEITRON
1/5
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11-Dec-08