2SD1616 Datasheet, PDF (1/5 Pages) Unisonic Technologies – NPN EPITAXIAL SILICON TRANSISTOR

NPN Transistors
2SD1616
2SD1616A
TO-92
ABSOLUTE MAXIMUM RATINGS (Ta=25 C)
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Total Device Dissipation TA=25 C
Junction Temperature
Storage, Temperature
Symbol
VCEO
VCBO
VEBO
IC
PD
Tj
Tstg
1. EMITTER
1
2. COLLECTOR
2
3
3. BASE
2SD16116
2SD1616A
Unit
50
60
Vdc
60
120
Vdc
6.0
Vdc
1.0
Adc
0.75
W
150
C
-55 to +150
C
ELECTRICAL CHARACTERISTICS
Characteristics
Collector-Emitter Breakdown Voltage (IC= 2.0 mAdc, IB=0)
2SD1616
2SD1616A
Collector-Base Breakdown Voltage (IC= 10 uAdc, IE=0)
2SD1616
2SD1616A
Emitter-Base Breakdown Voltage (IE= 10 uAdc, IC=0)
Collector Cutoff Current (VCB=60 Vdc, IE=0)
Emitter Cutoff Current (VEB= 6.0 Vdc, IC=0)
Symbol
Min
Max
Unit
V(BR)CEO
50
60
-
Vdc
V(BR)CBO
60
120
-
Vdc
V(BR)EBO
6.0
-
Vdc
ICBO
IEBO
-
0.1
uAdc
-
0.1
uAdc
WEITRON
http://www.weitron.com.tw