2SC5585 Datasheet, PDF (1/3 Pages) Rohm – Low frequency transistor (12V, 0.5A)

NPN TRANSISTOR
P b Lead(Pb)-Free
FEATURES:
* High current.
* Low VCE(sat). VCE(sat).250mV at IC = 200mA / IB = 10mA
2SC5585
3
1
2
SOT-523(SC-75)
MAXIMUM RATINGS (T_A=25°Cunless otherwise noted)
Parameter
Symbol
Collector-Base Voltage
Collector-Emitter Voltage
V_CBO
V_CEO
Emitter-Base Voltage
V_EBO
Collector Current –Continuous
I_C
Collector Dissipation
P_C
Junction Temperature
T_J
Storage Temperature
T_stg
Value
15
12
6
500
150
150
-55-150
Units
V
V
V
mA
mW
°C
°C
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Symbol
MIN
Collect or-base breakdown voltage
I_C =10μA, I_E=0
V_(BR)CBO
15
Collect or-emitter breakdown voltage IC=1mA, IB=0
V_(BR)CEO
12
Emitter- base breakdown voltage
I_E=10μA, I_C=0
V_(BR)EBO
6
Coll ect or cut-off curre nt
V_CB=15V, I_E=0
I_CBO
-
Emitter cut-off current
V_EB=6V, I_C =0
I_EBO
-
DC current gain
V_CE=2V, I_C=10mA
h_FE
270
Coll ect or-emitter sat uration voltage IC=200mA, IB=10mA
V_CE(sat)
-
Transitio n fr equ ency
V_CE=2V, I_{C=10mA, f=100MHz}
f_T
-
Collect or ou tput capaci tance
V_CB=10V, I_{E=0, f=1MHz}
C_ob
-
TYP MAX UNIT
-
-
V
-
-
V
-
-
V
-
0.1
μA
-
0.1
μA
-
680
-
-
0.25
V
320
-
MHz
7.5 -
pF
Marking : BX
WEITRON
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http://www.weitron.com.tw
06-Feb-10