2SC5354 Datasheet, PDF (1/3 Pages) Toshiba Semiconductor – NPN TRIPLE DIFFUSED TYPE (SWITCHING REGULATOR AND HIGH VOLTAGE SWITCHING, SWITCHING REGULATOR, HIGH SPEED DC-DC CONVERTER APPLICATIONS)

2SC5354
NPN Plastic-Encapsulate Transistor
P b Lead(Pb)-Free
FEATURES
* Excellent hFE Linearity
* Low Noise
MAXIMUM RATINGS (T_A=25℃ unless otherwise noted)
Symbol
Parameter
Value
Units
V_CBO
Collector- Base Voltage
60
V
V_CEO
Collector-Emitter Voltage
50
V
V_EBO
Emitter-Base Voltage
5
V
I_C
Collector Current -Continuous
150
mA
I_b
Base Current -Continuous
P_C
Collector Power Dissipation
50
mA
0.2
W
T_J
Junction Temperature
150
℃
T_stg
Storage Temperature
-55-150
℃
3
1
2
1. BASE
2. EMITTER
3. COLLECTOR
SOT-23
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Symbol
Test conditions
MIN
Collector-base breakdown voltage
V_(BR)CBO I_C=100 μA, I_E=0
60
Collector-emitter breakdown voltage
V_(BR)CEO I_C= 10mA, I _B=0
50
Emitter-base breakdown voltage
V_(BR)EBO IE= 10μA, I_C=0
5
Collector cut-off current
I_CBO
V_CB=60V, I_E=0
Emitter cut-off current
I_EBO
V_EB=5V, I_C=0
DC current gain
h_FE(1) V_CE=6V, I_C= 2mA
70
Collector-emitter saturation voltage
VCE(sat) IC=100mA,IB=10mA
Transition frequency
f_T
V_CE=10V, I_C= 1mA
80
Collector output capacitance
C_ob
VCB=10V,IE=0,f=1MHz
Noise figure
VCE=6V, IC= 0.1mA,
NF
f=1KHZ,Rg=10KΩ
TYP MAX UNIT
V
V
V
0.1
μA
0.1
μA
700
0.1
0.25
V
MHz
3.5
pF
10
dB
CLASSIFICATION OF hFE
Rank
O
Range
70 - 140
Y
120 - 240
G
200 - 400
L
300 - 700
WEITRON
1/3
http://www.weitron.com.tw
04-Oct-2010