2SC4738 Datasheet, PDF (1/3 Pages) Toshiba Semiconductor – NPN EPITAXIAL TYPE (AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS)

2SC4738
NPN TRANSISTOR
P b Lead(Pb)-Free
FEATURES:
High voltage and high current
Excellent h_FE linearity
High h_FE
Complementary to 2SA1832
3
1
2
SOT-523(SC-75)
MAXIMUM RATINGS (T_A=25°Cunless otherwise noted)
Parameter
Symbol
Collector-Base Voltage
V_CBO
Collector-Emitter Voltage
V_CEO
Emitter-Base Voltage
V_EBO
Collector Current –Continuous
I_C
Collector Dissipation
P_C
Junction Temperature
T_J
Storage Temperature
T_stg
Value
60
50
5
150
100
125
-55-125
Units
V
V
V
mA
mW
℃
℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Symbol
MIN
Collector-base breakdown voltage
I_C =100μA, I_E=0
V_(BR)CBO
60
Collector-emitter breakdown voltage IC=1mA, IB=0
V_(BR)CEO
50
Emitter-base breakdown voltage
I_E=100μA, I_C=0
V_(BR)EBO
5
Collector cut-off current
V_CB=60V, I_E=0
I_CBO
-
Emitter cut-off current
V_EB=5V, I_C =0
I_EBO
-
DC current gain
V_CE=6V, I_C=2mA
h_FE
120
Collector-emitter saturation voltage IC=100mA, IB=10mA
V_CE(sat)
-
Transition frequency
V_CE=10V, I_C=1mA
f_T
80
Collector output capacitance
V_CB=10V, I_{E=0, f=1MHz}
C_ob
-
CLASSIFICATION OF h_FE
Rank
Y
GR
Range
120-240
200-400
Marking
LY
LG
TYP MAX UNIT
-
-
V
-
-
V
-
-
V
-
0.1
μA
-
0.1
μA
-
700
-
-
0.25
V
-
-
MHz
-
3.5
pF
BL
350-700
LL
WEITRON
1/3
http://www.weitron.com.tw
30-Jan-08