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| 2SC4618 Datasheet, PDF (1/1 Pages) SeCoS Halbleitertechnologie GmbH – NPN General Purpose Transistor | |||
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NPN TRANSISTOR
P b Lead(Pb)-Free
FEATURES:
Power dissipation
PCM
Collector current
ICM: 0.05 A
Collector-base voltage
V(BR)CBO: 40 V
Operating and storage junction temperature range
TJ, Tstg
C
2SC4618
3
1
2
SOT-523(SC-75)
ELECTRICAL CHARACTERISTICS (Tamb=25â unless otherwise specified)
Parameter
Symbol
MIN
Collector-base breakdown voltage
IC =50 μA, IE=0
V(BR)CBO
40
Collector-emitter breakdown voltage IC=1mA, IB=0
V(BR)CEO
25
Emitter-base breakdown voltage
IE=50 μ A, IC=0
V(BR)EBO
5
Collector cut-off current
VCB=24V, IE=0
ICBO
Emitter cut-off current
VEB=3V, IC=0
IEBO
DC current gain
VCE=6V, IC=1mA
hFE
56
Collector-emitter saturation voltage IC=10mA, I B =1mA
VCE(sat)
Transition frequency
VCE=6V, IC=1mA, f=100MHZ
fT
150
Collector output capacitance
VCB=6V, I E=0, f=1MHz
Cob
TYP
MAX UNIT
V
V
V
0.5
μA
0.5
μA
270
0.3
V
MHz
2.2
pF
CLASSIFICATION OF hFE
Rank
Range
Marking
N
56-120
AN
P
82-180
AP
Q
120-270
AQ
WEITRON
1/1
http://www.weitron.com.tw
16-Jul-10
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