2SC4116 Datasheet, PDF (1/3 Pages) Toshiba Semiconductor – NPN EPITAXIAL TYPE (AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS)

2SC4116
General Purpose Transistor
NPN Silicon
P b Lead(Pb)-Free
COLLECTOR
3
1
BASE
3
1
2
FEATURES
* High voltage and high current
* Excellent h_FE linearity
* High h_FE
* Low noise
* Complementary to 2SA1586
2
EMITTER
SOT-323(SC-70)
MAXIMUM RATINGS (T_A=25℃ unless otherwise noted)
Parameter
Symbol
Collector-Base Voltage
V_CBO
Collector-Emitter Voltage
V_CEO
Emitter-Base Voltage
V_EBO
Collector Current -Continuous
I_C
Collector Power Dissipation
P_C
Junction Temperature
T_J
Junction and Storage Temperature
T_stg
Value
60
50
5
150
100
150
-55 to +150
Units
V
V
V
mA
mW
℃
℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Symbol
Test conditions
MIN TYP
Collector-base breakdown voltage
V_(BR)CBO I_C=100μA,I_E=0
60
-
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
V_(BR)CEO
V_(BR)EBO
I_C=1mA,I_B=0
I_E=100μA,I_C=0
50
-
5
-
Collector cut-off current
I_CBO
V_CB=60V,I_E=0
-
-
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
Noise figure
I_EBO
V_EB=5V,I_C=0
-
-
h_FE
V_CE=6V,I_C=2mA
70
-
V_CE(sat) I_C=100mA,I_B=10mA
-
-
f_T
V_CE=10V,I_C=1mA,
80
-
C_ob
V_CB=10V,I_E=0,f=1MHz
-
-
V_CE=6V,I_c=0.1mA,
NF
f=1KH_Z,Rg=10KΩ
-
-
M AX
-
-
-
0.1
0.1
700
0.25
-
3.5
10
UNIT
V
V
V
μA
μA
V
MHz
pF
dB
CLASSIFICATION OF h_FE
Rank
Range
Marking
O
70-140
LO
Y
120-240
LY
GR
200-400
LG
BL
350-700
LL
WEITRON
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http://www.weitron.com.tw
25-Jun-08