2SC3838Q Datasheet, PDF (1/3 Pages) Weitron Technology – High-Frequency Amplifier Transistor NPN Silicon

High-Frequency Amplifier Transistor
NPN Silicon
MAXIMUM RATINGS (Ta=25 C)
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current-Continuous
Symbol
VCEO
VCBO
VEBO
IC
THERMAL CHARACTERISTICS
Characteristics
Total Device Dissipation FR-5 Board⁽¹⁾
TA =25 C
Derate above 25 C
Thermal Resistance, Junction Ambient
Junction and Storage, Temperature
Device Marking
2SC3838Q=R25
Symbol
PD
R _θJA
T_J, Tstg
ELECTRICAL CHARACTERISTICS
Characteristics
Collector-Emitter Breakdown Voltage(IC =1 mAdc, IB=0)
Collector-Base Breakdown Voltage(IC =10 uAdc, IE=0)
Emitter-Base Breakdown Voltage(IE =10 uAdc, IC =0)
Collector Cufoff Current(VCB =10Vdc, IE=0)
Emitter Cufoff Current(VEB =2Vdc, I _C=0)
1. FR-5=1.0 ^I I0.75^I I0.062 in
2SC3838Q
COLLECTOR
3
2
BASE
1
EMITTER
3
2
1
SC-59
Value
11
20
3.0
50
Unit
Vdc
Vdc
Vdc
mAdc
Value
200
1.6
625
-55 to +150
Unit
mW
mW/ C
C/W
C
Symbol
Min Max
Unit
V(BR)CEO
11
-
Vdc
V(BR)CBO
20
-
Vdc
V(BR)EBO
3.0
-
Vdc
ICBO
IEBO
-
0.5
uAdc
-
0.5
uAdc
WEITRON
http://www.weitron.com.tw