2SC3838 Datasheet, PDF (1/3 Pages) Unisonic Technologies – HIGH-FREQUENCY AMPLIFIER TRANSISTOR

High-Frequency Amplifier Transistor
NPN Silicon
P b Lead(Pb)-Free
COLLECTOR
3
1
BASE
2
EMITTER
2SC3838
3
1
2
SOT-23
MAXIMUM RATINGS (Ta=25ºC)
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current-Continuous
THERMAL CHARACTERISTICS
Characteristics
Total Device Dissipation FR-5 Board⁽¹⁾
TA =25°C
Thermal Resistance, Junction Ambient
Junction and Storage, Temperature
Device Marking
2SC3838=AD
ELECTRICAL CHARACTERISTICS
Characteristics
Collector-Emitter Breakdown Voltage(IC =1mA, IB =0)
Collector-Base Breakdown Voltage(IC =10µA, IE =0)
Emitter-Base Breakdown Voltage(IE =10µA, IC =0)
Collector Cufo Current(VCB =10V, IE =0)
Emitter Cufo Current(VEB =2V, IC=0)
1. FR-5=1.0 ^I I0.75^I I0.062 in
Symbol
VCEO
VCBO
VEBO
IC
Symbol
PD
R _θJA
TJ, Tstg
Value
11
20
3.0
50
Value
150
625
-55 to +150
Unit
V
V
V
mA
Unit
mW
°C/W
°C
Symbol
Min Max
Unit
V(BR)CEO
11
-
V
V(BR)CBO
20
-
V
V(BR)EBO
3.0
-
V
ICBO
IEBO
-
0.5
µA
-
0.5
µA
WEITRON
1/3
http://www.weitron.com.tw
Rev.A 23-Jan-09