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| 2SC3356 Datasheet, PDF (1/3 Pages) NEC – MICROWAVE LOW NOISE AMPLIFIER(NPN SILICON EPITAXIAL TRANSISTOR) | |||
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2SC3356
High-Frequency Amplifier Transistor
NPN Silicon
P b Lead(Pb)-Free
FEATURES
* Low noise amplifier at VHF, UHF and CATV band.
* Low Noise and High Gain
* High Power Gain
3
1
2
1. BASE
2. EMITTER
3. COLLECTOR
SOT-23
MAXIMUM RATINGS (TA=25â unless otherwise noted)
Symbol
VCBO
VCEO
VEBO
IC
PC
TJ
Tstg
Parameter
Collector- Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
Value
20
12
3
0.1
0.25
150
-55-150
Units
V
V
V
A
W
â
â
ELECTRICAL CHARACTERISTICS (Tamb=25â unless otherwise specified)
Parameter
Symbol
Test conditions
MIN
Collector-base breakdown voltage
V(BR)CBO IC=10μA, IE=0
20
Collector-emitter breakdown voltage
V(BR)CEO IC= 1mA, IB=0
12
Collector-emitter breakdown voltage
VCE(sat) IC= 50mA, IB=5mA
Collector cut-off current
ICBO
VCB=10V, IE=0
Emitter cut-off current
DC current gain
IEBO
VEB=1V, IC=0
hFE*
VCE=3V, IC= 10mA
82
Transition frequency
fT
VCE=10V, IC= 20mA
Noise figure
NF
VCE=10V, IC= 7mA, f = 1GHz
TYP MAX UNIT
V
V
200 mV
1
μA
1
μA
270
7
GHz
2
dB
*pulse test: pulse widthâ¤350μs, Duty cycleâ¤2%
WEITRON
1/3
http://www.weitron.com.tw
Rev.B 25-Feb-09
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