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| 2SC2714 Datasheet, PDF (1/2 Pages) Toshiba Semiconductor – TRANSISTOR (HIGH FREQUENCY, FM, RF, MIX, IF AMPLIFIER APPLICATIONS | |||
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NPN General Purpose Transistors
P b Lead(Pb)-Free
2SC2714
SOT-23
ELECTRICAL CHARACTERISTICSï¼Tamb=25â unless otherwise specifiedï¼
Parameter
Symbol Test conditions
MIN
Collector-base breakdown voltage
V(BR)CBO Ic=10μA,IE=0
40
Collector-emitter breakdown voltage
V(BR)CEO Ic=1mA,IB=0
30
Emitter-base breakdown voltage
V(BR)EBO IE=10μA,IC=0
4
Collector cut-off current
ICBO
VCB=18V,IE=0
Emitter cut-off current
IEBO
VEB=4V,IC=0
DC current gain
hFE(1) VCE=6V,IC=1mA
40
Collector-emitter saturation voltage
VCE(sat) IC=10mA,IB=1mA
Transition frequency
fT
VCE=6V,IC=1mA
Power Gain
Gpe VCE=6V,Ic=1mA, f=100HZ
17
Noise figure
NF
VCE=6V,Ic=1mA, f=100HZ
TYP
400
5
MAX UNIT
V
V
V
0.5 μA
0.5 μA
200
0.3 V
MHz
pF
dB
CLASSIFICATION OF hFE(1)
Rank
Range
Marking
R
40-80
QR
O
70-140
QO
Y
100-200
QY
WEITRON
1/2
http://www.weitron.com.tw
19-Feb-09
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