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| 2SC2655 Datasheet, PDF (1/2 Pages) Toshiba Semiconductor – TRANSISTOR (POWER AMPLIFIER, SWITCHING APPLICATIONS) | |||
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NPN General Purpose Transistors
P b Lead(Pb)-Free
2SC2655
1
2
3
1.EMITTER
3.BASE
2.COLLECTOR
TO-92MOD
ELECTRICAL CHARACTERISTICS Tamb=25 unless otherwise specified
Parameter
Symbol Test conditions
MIN TYP
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
V(BR)CBO Ic=100 A,IE=0
V(BR)CEO Ic=10mA,IB=0
V(BR)EBO IE=100 A,IC=0
ICBO
VCB=50V,IE=0
IEBO
VEB=5V,IC=0
hFE(1) VCE=2V,IC=500mA
hFE(2) VCE=2V,IC=1.5A
VCE(sat) IC=1A,IB=0.05A
VBE(sat) IC=1A,IB=0.05A
fT
VCE=2V,IC=0.5A
Cob
VCB=10V,IE=0,f=1MHz
50
50
5
70
40
100
30
Tune on Time
ton
0.1
Vcc=30V,Ic=1A,
Switch time
Storage Time
tstg
IB1=-IB2=0.05A
1.0
Fall Time
tf
0.1
MAX UNIT
V
V
V
1
A
1
A
240
0.5
V
1.2
V
MHz
pF
s
CLASSIFICATION OF hFE(1)
Rank
Range
O
70-140
Y
120-240
WEITRON
1/2
http://www.weitron.com.tw
19-Feb-09
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