2SC1008 Datasheet, PDF (1/3 Pages) List of Unclassifed Manufacturers – TRANSISTOR NPN

WEITRON
NPN Plastic-Encapsulate Transistor
P b Lead(Pb)-Free
2SC1008
1. EMITTER
2. COLLECTOR
3. BASE
TO-92
MAXIMUM RATINGS (TA=25°C unless otherwise noted)
Parameter
Symbol
Collector-Base Voltage
VCBO
Collector Current
ICM
Power Dissipation
PCM
Junction Temperature
TJ
Storage Temperature
Tstg
Value
80
0.7
0.8
-55 to +150
-55 to +150
Units
V
A
W
°C
°C
ELECTRICAL CHARACTERISTICS (Tamb=25°C unless otherwise specified)
Parameter
Symbol Test conditions _MIN
Collector-base breakdown voltage
V(BR)CBO IC= 100µA, IE=0
80
Collector-emitter breakdown voltage ^{V(BR)CEO IC= 10mA, IB=0}
60
Emitter-base breakdown voltage
V(BR)EBO IE= 10µA, IC =0
8
Collector cut-off current
ICBO _{VCB= 60V, IE =0}
Emitter cut-off current
IEBO
VEB= 5V, IC=0
DC current gain
hFE VCE= 2V, IC= 50mA 40
Collector-emitter saturation voltage VCE(sat) IC=500mA, IB= 50mA
Base-emitter saturation voltage
VBE(sat) IC=500mA, IB= 50mA
Transition Frequency
fT
VCE=10V,IC=50mA
30
TYP
MAX
0.1
0.1
400
0.4
1.1
Units
V
V
V
µA
µA
V
V
MHz
CLASSIFICATION OF h_FE
Rank
R
Range
40-80
O
70-140
Y
120-240
G
200-400
WEITRON
1/3
hpp://www.weitron.com.tw
15-Feb-2011