2SB776 Datasheet, PDF (1/5 Pages) Sanyo Semicon Device – 100V/7A, AF 40W Output Applications

2SB776 PNP Epitaxial Planar Transistors
2SD886 NPN Epitaxial Planar Transistors
P b Lead(Pb)-Free
2SB776
2SD886
TO-126
1.EMITTER
2.COLLECTOR
3.BASE
1
2
3
ABSOLUTE MAXIMUM RATINGS (Ta=25°C)
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Total Cevice Disspation Ta=25°C
Junction Temperature
Storage Temperture
Symbol
V_CEO
V_CBO
V_EBO
I_C
P_D
TJ
Tstg
PNP/2SB776 NPN/2SD886
-50
50
-50
50
-5.0
5.0
-3.0
3.0
1.0
+150
-55 to +150
Unit
V
V
V
A
W
°C
Device Marking
2SB776=B776 , 2SD886=D886
ELECTORICAL CHARACTERISTICS
Characteristics
Collect-Emitter Breakdown Voltage (I_C=-5/5 mA, I_B=0)
Collect-Base Breakdown Voltage (I_C=-100/100 µA, I_E=0)
Emitter-Base Breakdown Voltage (I_E=-100/100 µA, I_C=0)
Collector Cutoff Current (V_CB=-50/50 V, I_E=0)
Emitter Cutoff Current (V_EB=-3.0/3.0Vdc, I_C=0)
Symbol
V_(BR)CEO
V_(BR)CBO
V_(BR)EBO
I_CBO
I_EBO
Min
-50/50
Max
-
-50/50
-
-5.0/5.0
-
-
-1.0/1.0
-
-1.0/1.0
Unit
V
V
V
µA
µA
WEITRON
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14-Apr-08