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| 2SB772_07 Datasheet, PDF (1/5 Pages) STMicroelectronics – PNP medium power transistor | |||
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PNP / NPN Epitaxial Planar Transistors
P b Lead(Pb)-Free
2SB772
2SD882
TO-126
1.EMITTER
2.COLLECTOR
3.BASE
1
2
3
ABSOLUTE MAXIMUM RATINGS (Ta=25°C)
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current(DC)
Collector Current(Pulse)(1)
Base Current
Total Cevice Disspation Ta=25°C
Total Cevice Disspation Tc=25°C
Junction Temperature
Storage, Temperture
Symbol
VCEO
VCBO
VEBO
IC(DC)
IC(Pulse)
IB(Pulse)
PD
PD
Tj
Tstg
PNP/2SB772 NPN/2SD882
-30
30
-40
40
-5.0
5.0
-3.0
3.0
-7.0
7.0
-0.6
0.6
1.0
10
150
-55 to +150
Unit
Vdc
Vdc
Vdc
Adc
Adc
Adc
W
W
°C
°C
Device Marking
2SB772=B772 , 2SD882=D882
ELECTORICAL CHARACTERISTICS
Characteristics
Collect-Emitter Breakdown Voltage (IC=-10/10 mAdc, IB=0)
Collect-Base Breakdown Voltage (IC=-100/100 µAdc, IE=0)
Emitter-Base Breakdown Voltage (IE=-100/100 µAdc, IC=0)
Collector Cutoff Current (VCE=-30/30 Vdc, IB=0)
Collector Cutoff Current (VCB=-40/40 Vdc, IE=0)
Emitter Cutoff Current (VEB=-6.0/6.0Vdc, IC=0)
NOTE: 1.PW ⤠350us, duty cycle ⤠2%
Symbol
V(BR)CEO
V(BR)CBO
V(BR)EBO
ICEO
ICBO
IEBO
Min
-30/30
Max
-
-40/40
-
-5.0/5.0
-
-
-1.0/1.0
-
-1.0/1.0
-
-1.0/1.0
Unit
Vdc
Vdc
Vdc
µAdc
µAdc
µAdc
WEITRON
http://www.weitron.com.tw
1/5
Rev.B 14-Aug-07
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