2SB772 Datasheet, PDF (1/5 Pages) NEC – PNP SILICON POWER TRANSISTOR

PNP/NPN Epitaxial Planar Transistors
ABSOLUTE MAXIMUM RATINGS (Ta=25 C)
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base VOltage
Collector Current (DC)
Collector Current (Pulse) ⁽¹⁾
Base Current
Total Device Disspation TA =25 C
Total Device Dissipation Tc=25 C
Junction Temperature
Storage, Temperature
Symbol
VCEO
VCBO
VEBO
IC(DC)
IC (Pulse)
IB(Pulse)
PD
PD
Tj
Tstg
Device Marking
2SB772=B772 , 2SD882=D882
ELECTRICAL CHARACTERISTICS
Characteristics
Collector-Emitter Breakdown Voltage (IC= -10/10 mAdc, IB=0)
Collector-Base Breakdown Voltage (IC= -100/100 µAdc, IE=0)
Emitter-Base Breakdown Voltage (IE= -100/100 µAdc, IC=0)
Collector Cutoff Current (VCE= -30/30 Vdc, IB =0)
Collector Cutoff Current (VCB= -40/40 Vdc, IE=0)
Emitter Cutoff Current (VEB= -6.0/6.0Vdc, I _C =0)
NOTE: 1.PW 350us, duty cycle 2%
2SB772
2SD882
TO-126
1. EMITTER
2.COLLECTOR
3.BASE
1
2
3
PNP/2SB772 NPN/2SD882
Unit
-30
30
Vdc
-40
40
Vdc
-5.0
5.0
Vdc
-3.0
3.0
Adc
-7.0
7.0
Adc
-0.6
0.6
Adc
1.0
W
10
W
150
C
-55 to +150
C
Symbol
Min
Max
V(BR)CEO -30/30
-
V(BR)CBO ^-40/40
-
V(BR)EBO _-5.0/5.0 ^-
ICE0
- ^-1.0/1.0
ICBO
- _-1.0/1.0
IEBO
- _-1.0/1.0
Unit
Vdc
Vdc
Vdc
uAdc
uAdc
uAdc
WEITRON
http://www.weitron.com.tw