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| 2SB766A Datasheet, PDF (1/3 Pages) Unisonic Technologies – LOW FREQUENCY OUTPUT AMPLIFICATION | |||
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2SB766A
PNP EPITAXIAL PLANAR TRANSISTOR
P b Lead(Pb)-Free
MAXIMUM RATINGS (TA=25â unless otherwise noted)
Parameter
Symbol Value
Units
Collector-Base Voltage
VCBO
-60
V
Collector-Emitter Voltage
VCEO
-50
V
Emitter-Base Voltage
VEBO
-5
V
Collector Current -Continuous
IC
-1
A
Collector Power dissipation
PC
500
mW
Junction Temperature
TJ
150
â
Storage Temperature
Tstg
-55-150
â
1. BASE
2. COLLECTOR
3. EMITTER
1
2
3
SOT-89
ELECTRICAL CHARACTERISTICS (Tamb=25â unless otherwise specified)
Parameter
Symbol
Test conditions
MIN TYP MAX UNIT
Collector-base breakdown voltage
V(BR)CBO IC=-10μA, IE=0
-60
-
-
V
Collector-emitter breakdown voltage
V(BR)CEO IC=-2mA, IB=0
-50
-
-
V
Emitter-base breakdown voltage
V(BR)EBO IE=-10μA, IC=0
-5
-
-
V
Collector cut-off current
ICBO
VCB=-20V, IE=0
-
-
-0.1 μA
Emitter cut-off current
IEBO
VEB=-4V, IC=0
-
-
-0.1 μA
DC current gain
hFE1 VCE=-10V, IC=-500mA
85
-
340
DC current gain
hFE2 VCE=-5V, IC=-1A
50
-
-
Collector-emitter saturation voltage
VCE(sat) IC=-500mA, IB=-50mA
-
-0.2 -0.4
V
Collector-emitter saturation voltage
VBE(sat) IC=-500mA, IB=-50mA
-
-0.85 -1.2
V
Transition frequency
fT
VCE=-10V, IC=-50mA, f=200MHz
-
200
-
MHz
Collector output capacitance
Cob
VCB=-10V, IE=0, f=1MHz
-
20
30 pF
CLASSIFICATION OF hFE
Rank
Range
Marking
Q
85-170
BQ
R
120-240
BR
S
170-340
BS
WEITRON
1/3
http://www.weitron.com.tw
26-Dec-08
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