2SB649 Datasheet, PDF (1/5 Pages) Hitachi Semiconductor – Silicon PNP Epitaxial

PNP Epitaxial Planar Transistors
P b Lead(Pb)-Free
2SB649/2SB649A
1. EMITTER
2. COLLECTOR
3. BASE
1
23
TO-126C
ABSOLUTE MAXIMUM RATINGS(TA=25ºC)
Rating
Symbol
2SB649
2SB649A
Unit
Collector-Emitter Voltage
V_CBO
-180
V
Collector-Base Voltage
V_CEO
-120
-160
V
Emitter-Base Voltage
V_EBO
6.0
V
Collector Current
I_C
-1.5
A
Power Disspation
P_D
1.0
W
Junction Temperature
T_j
+150
˚C
Storage Temperature
T_stg
-55 to +150
˚C
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21-Mar-06