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| 2SB624 Datasheet, PDF (1/4 Pages) NEC – AUDIO FREQUENCY POWER AMPLIFIER PNP SILICON EPITAXIAL TRANSISTOR MINI MOLD | |||
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PNP Epitaxial Planar Transistors
P b Lead(Pb)-Free
ABSOLUTE MAXIMUM RATINGS (TA=25ËC)
Rating
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
Symbol
VCBO
VCEO
VEBO
IC
PD
Tj
Tstg
2SB624
3
2
1
SC-59
Limits
Unit
-30
V
-25
V
-5
V
-700
A
200
mW
150
ËC
-55 to +150
ËC
ELECTRICAL CHARACTERISTICS(TA=25ËCunless otherwise noted)
Parameter
Collector-Base Breakdown Voltage
IC=-100µA, IE=0
Collector-Emitter Breakdown Voltage
IC=-1mA, IB=0
Emitter-Base Breakdown Voltage
IE=-100µA, IC=0
Collector Cutoï¬ Current
VCB=-30V, IE=0
Emitter Cutoï¬ Current
VEB=-5V, IE=0
Symbol
Min
Typ
Max
Unit
BVCBO
-30
-
-
V
BVCEO
-25
-
-
V
BVEBO
-5
-
-
V
ICBO
-
-
-0.1
µA
IEBO
-
-
-0.1
µA
WEITRON
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