2SB1260 Datasheet, PDF (1/5 Pages) Rohm – Power Transistor

PNP Plastic-Encapsulate Transistor
ABSOLUTE MAXIMUM RATINGS(Ta=25^%C)
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Junction Temperature, Storage Temperature
Symbol
VCEO
VCBO
VEBO
IC
I _CP
PC
T_{j , Tstg}
Device Marking
2SB1260=ZL
ELECTRICAL CHARACTERISTICS
Characteristics
Collector-Emitter Breakdown Voltage (IC= -1.0 mAdc, IB=0)
Collector-Base Breakdown Voltage (IC= -50 µAdc, IE=0)
Emitter-Base Breakdown Voltage (IE= -50 µAdc, IC=0)
Collector Cutoff Current (VCB= -60 Vdc, IE=0)
Emitter Cutoff Current (VEB=-4.0 Vdc, IC=0)
1.FR-5=1.0 x 0.75 x 0.062 in.
2SB1260
SOT-89
1
1. BASE
2
3
2. COLLECTOR
3. EMITTER
Value
-80
-80
-5.0
1.0
2.0
0.5
150, -55 to +150
Unit
Vdc
Vdc
Vdc
Adc(DC)
Adc (Pulse)
W
%_C
Symbol
Min
Max
Unit
V(BR)CEO
-80
-
Vdc
V(BR)CBO
-80
-
Vdc
V(BR)EBO
-5.0
-
Vdc
ICBO
-
-1
uAdc
IEBO
-
-1
uAdc
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