2SB1188 Datasheet, PDF (1/5 Pages) Rohm – Medium power Transistor(-32V, -2A)

Epitaxial Planar PNP Transistors
ABSOLUTE MAXIMUM RATINGS (Ta=25^%C)
Rating
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Junction Temperature, Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
T _j,Tstg
* Single pulse Pw = 100ms
2SB1188
SOT-89
1
2
1. BASE
3
2. COLLECTOR
3. EMITTER
Limits
-40
-32
-5
-2
-3
0.5
150, -55 to +150
Unit
Vdc
Vdc
Vdc
A(DC)
A (Pulse)*
W
%_C
ELECTRICAL CHARACTERISTICS ^{(Ta=25%C unless otherwise noted )}
Parameter
Symbol
Collector-Base Breakdown Voltage (Ic=-50uA)
BVCBO
Collector-Emitter Breakdown Voltage (Ic=-1mA)
Emitter-Base Breakdown Voltage (I_E=-50uA)
BV_CEO
BVEBO
Collector Cutoff Current (V_CB=-20)
Emitter Cutoff Current (V_EB=-4V)
ICBO
IEBO
Min Typ Max Unit
-40 -
-
V
-32 -
-
V
-5
-
-
V
-
-
-1 uA
-
-
-1 uA
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