2SB1184 Datasheet, PDF (1/4 Pages) Rohm – Power Transistor (-60V, -3A)

2SB1184
PNP PLASTIC ENCAPSULATE TRANSISTORS
P b Lead(Pb)-Free
Features:
* Low VCE(sat). VCE(sat) = -0.5V (Typ.) (IC/IB = -2A / -0.2A)
MAXIMUM RATINGS (TA=25ºC unless otherwise noted)
Parameter
Symbol
Value
Unit
Collector-Base Voltage
Collector-Emitter Voltage
V _CBO
-60
V
V _CEO
-50
V
Emitter-Base Voltage
V _EBO
-5
V
Collector Current –Continuous
IC
-3
A
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
Pc
1
W
Tj
+150
˚C
Tstg _{-55 to +150}
˚C
1.BASE
2.COLLECTOR
3.EMITTER
TO-251
1.BASE
2.COLLECTOR
3.EMITTER
23
1
D-PAK(TO-252)
ELECTRICAL CHARACTERISTICS (Tamb=25ºC unless otherwise specified)
Parameter
Symbol
Test Conditions
MIN TYP MAX UNIT
Collector-base breakdown voltage
V_(BR)CBO I_C=-50µA, I_E=0
-60
V
Collector-emitter breakdown voltage ^{V(BR)CEO I}C^{=-1mA, I}B⁼⁰
-50
V
Emitter-base breakdown voltage
V_(BR)EBO I_E=-50µA, I_C=0
-5
V
Collector cut-off current
I_CBO
V_CB=-40V, I_E=0
-1
µA
Emitter cut-off current
I_EBO
V_EB=-4V, I_C=0
-1
µA
DC current gain
h_FE(1) V_CE=-3V, I_C=-0.5A
82
390
Collector-emitter saturation voltage
V_CE(sat) I_C=-2A, I_B=-0.2A
-1
V
Base-emitter saturation voltage
V_BE(sat) I_C=-1.5A, I_B=-0.15A
-1.2 V
Transition frequency
f_T
V_CE=-5V, I_C=-0.5A, f=30MHz
70
MHz
Collector output capacitance
C_ob
V_CB=-10V, I_E=0, f=1MHz
50
pF
CLASSIFICATION OF hFE(1)
Rank
P
Range
82-180
Marking
Q
12 0- 270
R
18 0- 39 0
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05-Oct-2010